• DocumentCode
    2758146
  • Title

    Reduced surface recombination and strongly enhanced light extraction in CH4-plasma-irradiated GaInAsP photonic crystals

  • Author

    Ichikawa, Hiroyuki ; Inoshita, K. ; Baba, Toshihiko

  • Author_Institution
    Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    490
  • Abstract
    We report on the substantial reduction in surface recombination and 40 fold increase in light extraction efficiency of CH4-plasma-irradiated GaInAsP photonic crystals of micro-columns. These results will significantly contribute to the improvement in LED efficiency
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; photonic band gap; semiconductor quantum wells; sputter etching; surface recombination; CH4-plasma-irradiated; GaInAsP; GaInAsP photonic crystals; LED efficiency; light extraction efficiency; micro-columns; strongly enhanced light extraction; surface recombination; Charge carrier lifetime; Etching; Light emitting diodes; Optical computing; Photonic crystals; Plasma applications; Plasma materials processing; Plasma properties; Spontaneous emission; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.893928
  • Filename
    893928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2758146