• DocumentCode
    2759070
  • Title

    Effect of gamma-ray irradiation on surface charge decay through bulk of epoxy resin

  • Author

    Gao, Y. ; Du, B.X.

  • Author_Institution
    Sch. of Electr. Eng. & Autom., Tianjin Univ., Tianjin, China
  • fYear
    2012
  • fDate
    10-13 June 2012
  • Firstpage
    531
  • Lastpage
    534
  • Abstract
    This paper presents study aimed at understanding the effect of gamma-ray irradiation on surface charge decay through bulk of epoxy resin. Laminated epoxy resin was employed as test sample which was irradiated in air up to 100 kGy and then up to 1000 kGy with dosage rate of 10 kGy / h by using a 60Co gamma-source before the test. Surface charge was introduced by corona charging method and surface potential decay dynamics was monitored with an electrostatic voltmeter. Trap distribution as well as effective charge mobility was estimated from the potential decay measurements. Obtained results show that surface potential decays bi-exponentially regardless of the polarity. Two-trap-center characteristics appear for both electron and hole in epoxy resin, the density as well as the depth in the trap center varies with the total dose. Effective charge mobility decreases initially then tends to increase with the total dose grows from 0 kGy to 1000 kGy. The change in the decay behavior of surface charge is attributed to the variation of chemical and physical structures of epoxy resin caused by the irradiation.
  • Keywords
    carrier mobility; cobalt; epoxy insulation; gamma-ray effects; laminations; resins; surface potential; voltmeters; 60Co; charge mobility; corona charging method; electrostatic voltmeter; gamma ray irradiation; laminated epoxy resin; surface potential decay dynamics; trap distribution; two-trap-center characteristics; Electrodes; Electron traps; Erbium; Permittivity; Radiation effects; Surface charging; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation (ISEI), Conference Record of the 2012 IEEE International Symposium on
  • Conference_Location
    San Juan, PR
  • ISSN
    1089-084X
  • Print_ISBN
    978-1-4673-0488-7
  • Electronic_ISBN
    1089-084X
  • Type

    conf

  • DOI
    10.1109/ELINSL.2012.6251526
  • Filename
    6251526