DocumentCode
2759920
Title
A novel LWR reduction approach to enhance reliability performance in ultra-thin barrier/porous low-k (K<2.4) interconnect
Author
Lu, C.W. ; Tsai, T.J. ; Chang, Y.S. ; Tsai, C.H. ; Singh, S.K. ; Huang, T.M. ; Yao, H.C. ; Lee, Chang Jae ; Bao, T.I. ; Shue, Sam L. ; Yu, Cody Hao
Author_Institution
Exp Interconnect Module Dept., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
This study evaluated plasma treatment processes on 193i and EUV photoresist to improve the line width roughness (LWR) performance in porous low-k/ultra-thin barrier Cu interconnect. We successfully demonstrated 20% LWR reduction for 193i PR and 11% for EUV PR. Furthermore, the influence of LWR on reliability was evaluated on 45nm line-width test vehicle. A boost of 10 times Time Dependent Dielectric Breakdown (TDDB) and 2 times Eelectrical Migration (EM) was demonstrated.
Keywords
integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; photoresists; plasma materials processing; porous materials; ultraviolet lithography; 193i PR; Cu; EM; EUV PR; EUV photoresist; LWR performance; LWR reduction; TDDB; electrical migration; line width roughness; line-width test vehicle; plasma treatment process; porous low-k/ultra-thin barrier Cu interconnect; reliability performance; size 45 nm; time dependent dielectric breakdown; ultra-thin barrier/porous low-k interconnect; Plasmas; Reliability; Resists; Rough surfaces; Surface roughness; Surface treatment; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251569
Filename
6251569
Link To Document