Synthesis and Characterization of Ultrathin Si:SiO2 Thin Films for Photovoltaic Applications

Author

Murthy, Hari ; Kumar, Anil ; Jayavel, R.

Author_Institution

Centre for Nanosci. & Technol., Anna Univ., Chennai, India

fYear

2011

fDate

8-10 Dec. 2011

Firstpage

1

Lastpage

5

Abstract

In this research paper, the optical properties of ultrathin Si:SiO₂ films deposited by Plasma-enhanced chemical vapour deposition (PECVD) were studied. The main purpose of this research was to observe the transmittance and absorbance of multiple layers of Si and SiO₂ alternatively deposited on the substrate for photovoltaic applications. The optical properties that were studied include UV-Visible spectroscopy and photoluminsence. Analysis of the UV Visible spectroscopy revealed a band gap of 2.65eV for the multilayered Si:SiO₂ films which was confirmed by the data obtained from photoluminescence.

Keywords

photoluminescence; plasma CVD; solar cells; thin films; ultraviolet spectroscopy; visible spectroscopy; PECVD; Si:SiO₂; UV-visible spectroscopy; optical properties; photoluminsence; photovoltaic applications; plasma-enhanced chemical vapour deposition; silica layer absorbance; silicon layer transmittance; thin film characterization; thin film synthesis; Absorption; Films; Photonic band gap; Photonics; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience, Technology and Societal Implications (NSTSI), 2011 International Conference on

Conference_Location

Bhubaneswar

Print_ISBN

978-1-4577-2035-2

Type

conf

DOI

10.1109/NSTSI.2011.6111778

Filename

6111778