• DocumentCode
    2761420
  • Title

    Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device

  • Author

    Lee, Kyumin ; Kim, Jonggi ; Lee, Sunghoon ; Park, Sunghoon ; Sohn, Hyunchul

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.
  • Keywords
    niobium compounds; platinum; random-access storage; semiconductor doping; titanium compounds; tungsten; TiN-W:NbOx-Pt; bipolar resistive switching behavior; oxygen vacancies concentration; resistive random access memory; tungsten doping concentration; Doping; Films; Semiconductor device measurement; Switches; Switching circuits; Tin; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251647
  • Filename
    6251647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2761420