DocumentCode
2763692
Title
Proton Radiation Tolerance of SiGe Power HBTs
Author
Ningyue Jiang ; Zhenqiang Ma ; Pingxi Ma ; Racanelli, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal AC characteristics, for the first time, the proton radiation tolerance of the large-signal high power performance characteristics of SiGe power HBTs was investigated
Keywords
Ge-Si alloys; MIS structures; heterojunction bipolar transistors; power bipolar transistors; proton detection; tolerance analysis; DC characteristic; SiGe; SiGe power HBT; commercial BiCMOS process; device structure optimization; large-signal high power performance; proton radiation tolerance; small-signal AC characteristics; Degradation; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Performance evaluation; Power measurement; Protons; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246592
Filename
1715961
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