• DocumentCode
    2764123
  • Title

    Epitaxial Growth of P Atomic Layer Doped Si Film by Alternate Surface Reaction of PH3and Si2H6on Strained Si1-xGex/Si

  • Author

    Chiba, Ryosuke ; Sakuraba, Masao ; Masao, J.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, in order to improve the abruptness, P atomic layer formation and P atomic layer doping in Si epitaxial growth using Si2H6 by ultraclean low pressure CVD (LPCVD) and its electrical characteristics were investigated
  • Keywords
    Ge-Si alloys; chemical vapour deposition; epitaxial growth; semiconductor doping; LPCVD; Si:P; Si2H6; SiGe-Si; alternate surface reaction; atomic layer doping; electrical characteristics; epitaxial growth; ultraclean low pressure CVD; Atomic layer deposition; Atomic measurements; Doping profiles; Epitaxial growth; Hydrogen; Inductors; Optical films; Semiconductor films; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246489
  • Filename
    1715983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764123