Physical and Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor Containing Germanium Nanocrystals

Author

Chiang, K.H. ; Lu, S.W. ; Peng, Y.H. ; Chen, Patrick S. ; Kuan, C.H.

Author_Institution

Graduate Inst. of Electron. Eng., National Taiwan Univ., Taipei

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We present an extensive study about the formation of Ge nanocrystals by using two-step process deposition by a commercially UHVCVD system. We also investigate the growth duration effect on micro-Raman characterization in SiO₂ matrix containing Ge-NCs. FTIR spectroscopy is employed to monitor the amount of various chemical bonds in SiO₂ matrix embedded with Ge-NCs under various annealing temperatures. The C-V curves show the hysteresis indicating the charge storage. Furthermore, high temperature annealing effects are also presented and going to be discussed

Keywords

MOS capacitors; Raman spectroscopy; germanium; nanostructured materials; plasma CVD; silicon; silicon compounds; C-V curves; FTIR spectroscopy; PECVD; Si-SiO₂-Ge; UHVCVD system; charge storage; electrical characteristics; germanium nanocrystals; growth duration effect; high temperature annealing; hysteresis; metal-oxide semiconductor capacitor; microRaman characterization; physical characteristics; silicon dioxide matrix; Annealing; Capacitance-voltage characteristics; Capacitors; Chemicals; Electric variables; Germanium; Monitoring; Nanocrystals; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246493

Filename

1715987