DocumentCode
2764205
Title
Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers
Author
Trinkaus, H. ; Buca, Dan ; Hollander, B. ; Mantl, Siegfried ; Khan, Ab Rouf ; Bauer, G.
Author_Institution
Inst. fur Festkorperforschung, Forschungzentrum Jiilich GmbH, Julich
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
We discuss the role of the discrete nature of misfit dislocations in XRD. For this, we consider a large number of different arrays of 60deg misfit dislocations relevant for SiGe/Si hetero-systems and introduce the concept of caustics of increasing order (Trinkaus and Naturf, 1973 and Trinkaus and Drepper, 1977) to determine the XRD peak positions for these arrays
Keywords
Ge-Si alloys; X-ray diffraction; dislocation arrays; substrates; SiGe-Si; SiGe-Si hetero-systems; X-ray diffraction theory; XRD peak positions; discrete nature; misfit dislocations; partially relaxed layers; Capacitive sensors; Germanium silicon alloys; Information technology; Lattices; Physics; Silicon germanium; Strain measurement; Thermal stresses; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246494
Filename
1715988
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