• DocumentCode
    2764502
  • Title

    Influence of Collector Design on the SiGe HBT´s Quasi-Saturation Characteristics

  • Author

    Cai, Wenlong ; Jie Zheng ; Edward Preisler ; Paul Hurwitz ; Racanelli, M.

  • Author_Institution
    Jazz Semicond., Newport Beach, CA
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper we examine the SiGe HBT´s current-voltage characteristics where Jc is several times the Kirk current density JHC = qNepi vsat. We analyze the QS characteristics by comparing the NPN´s with different intrinsic collector doping profiles fabricated on the same wafer. Data from NPN´s made from various thicknesses and concentrations of the epi-layer are also presented
  • Keywords
    Ge-Si alloys; current density; doping profiles; heterojunction bipolar transistors; Kirk current density; SiGe; collector design; collector doping profiles; current-voltage characteristics; heterojunction bipolar transistor; quasisaturation characteristics; Current density; Current-voltage characteristics; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Kirk field collapse effect; Power amplifiers; Power generation; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246507
  • Filename
    1716001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764502