• DocumentCode
    2764871
  • Title

    Multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

  • Author

    Shoji, Yasushi ; Oshima, Ryuji ; Takata, Ayami ; Morioka, Takayuki ; Okada, Yoshitaka

  • Author_Institution
    Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen assisted molecular beam epitaxy (H-MBE). A 3 dimensionally well ordered InGaAs QD array structure with a total density of ~1012 cm-2 has been achieved on GaAs (311)B substrate. The external quantum efficiencies of InGaAs/GaNAs QDSCs increase in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. We have achieved a higher short-circuit current density of 18.7 mA/cm2 compared to an InAs/GaNAs QDSC fabricated on GaAs (001).
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dots; solar cells; substrates; InGaAs-GaNAs; atomic hydrogen assisted molecular beam epitaxy; multistacked quantum dot solar cell; strain-compensated QD structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615997
  • Filename
    5615997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764871