DocumentCode
2765070
Title
Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique
Author
Berer, Thomas ; Pachinger, D. ; Pillwein, G. ; Muhlberger, M. ; Lichtenberger, H. ; Brunthaler, G. ; Schaffler, F.
Author_Institution
Inst. fur Halbleiter und Festkorperphys., Johannes Kepler Univ., Linz
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
Our experiments demonstrate that Schottky-barrier reducing mechanisms can be overcome by adequately designed Si/SiGe heterostructures and that single electron transistor (SET) functionality can be achieved in modulation-doped Si/SiGe heterostructures with a standard split-gate approach that can easily be integrated into an array of coupled SETs
Keywords
Ge-Si alloys; Schottky barriers; elemental semiconductors; semiconductor doping; semiconductor quantum dots; silicon; single electron transistors; Schottky split-gate technique; Schottky-barrier reducing mechanisms; Si-SiGe; lateral quantum dot; modulation doped heterostructures; single electron transistors; split-gate approach; Electrons; Epitaxial layers; Germanium silicon alloys; Quantum computing; Quantum dots; Schottky barriers; Silicon germanium; Split gate flash memory cells; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246538
Filename
1716032
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