• DocumentCode
    2765361
  • Title

    Progress in SiGe Technology Toward Fully Integrated mmWave ICs

  • Author

    Gaucher, B. ; Reynolds, S. ; Floyd, Brian ; Pfeiffer, U. ; Beukema, Troy ; Joseph, Alvin ; Mina, Essam ; Orner, Bill ; Wachnik, Richard ; Walter, K.

  • Author_Institution
    IBM Res., Yorktown Heights, NY
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We described newly developed, enhanced technology and enablement features that lead to state of the art mmwave ICs capable of meeting Gbps speeds required of emerging applications. Die photographs of the Rx and Tx are shown in (Floyd, 2006). The die sizes are 3.4times1.7mm2 and 4.0times1.6mm2, respectively
  • Keywords
    Ge-Si alloys; millimetre wave integrated circuits; transceivers; SiGe; die photographs; millimetre wave integrated circuits; mm wave integrated circuits; BiCMOS integrated circuits; Electromagnetic interference; Germanium silicon alloys; Packaging; Rivers; Schottky diodes; Silicon germanium; Transceivers; Varactors; Waveguide junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246556
  • Filename
    1716050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765361