Low power random number generator using single electron transistor

Author

Tannu, Swamit ; Sharma, Abhishek

Author_Institution

Dept. of Electron. Eng., Sardar Patel Inst. of Technol., Mumbai, India

fYear

2012

fDate

19-20 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

Realization of high-quality random number generator (RNG) is essential for secure communication. In this paper, a RNG, which utilizes single-electron phenomena, is proposed. A room-temperature operating titanium oxide single-electron transistor(SET) is considered. Electron pocket is used as a high-quality, ultra-small RNG. In the proposed RNG, a stochastic single-electron capture/emission process is utilized to generate the 16 bit random numbers. Because of its small-size and low-power, it has potential to change the future of encryption.

Keywords

cryptographic protocols; random number generation; single electron transistors; RNG; SET; cryptographic protocols; electron pocket; encryption; high-quality random number generator; low power random number generator; room-temperature operating titanium oxide single-electron transistor; secured communication; single-electron phenomena; stochastic single-electron capture process; stochastic single-electron emission process; Bit rate; Cryptography; Fluctuations; Generators; Integrated circuit modeling; Noise; Single electron transistors; Electron capture/emission; Random Number Generator; Single Electron Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication, Information & Computing Technology (ICCICT), 2012 International Conference on

Conference_Location

Mumbai

Print_ISBN

978-1-4577-2077-2

Type

conf

DOI

10.1109/ICCICT.2012.6398099

Filename

6398099