• DocumentCode
    2766386
  • Title

    Photonic device integration using MOCVD grown quantum dots

  • Author

    Mokkapati, S. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Australian Nat. Univ., Canberra
  • fYear
    2006
  • fDate
    6-8 Dec. 2006
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.
  • Keywords
    MOCVD; gallium arsenide; indium compounds; integrated optics; photonic band gap; quantum dot lasers; quantum well lasers; InGaAs; InGaAs quantum-dots; MOCVD grown quantum dots; epitaxial layers; photonic device integration; Epitaxial layers; Indium gallium arsenide; Laser tuning; MOCVD; Optical control; Photonic band gap; Quantum dot lasers; Quantum dots; Quantum well lasers; Waveguide lasers; photonic device integration; quantum-dots; selective-area epitaxy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    978-1-4244-0578-7
  • Electronic_ISBN
    978-1-4244-0578-7
  • Type

    conf

  • DOI
    10.1109/COMMAD.2006.4429877
  • Filename
    4429877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2766386