DocumentCode
2767112
Title
Characterization of defects in photovoltaics using thermoreflectance and electroluminescence imaging
Author
Kendig, Dustin ; Alers, Glenn B. ; Shakouri, Ali
Author_Institution
Univ. of California, Santa Cruz, CA, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Thermal and electroluminescence (EL) imaging techniques are widely accepted as powerful tools for analyzing solar cells. We have identified and characterized various defects in photovoltaic devices with sub-micron spatial resolution using a novel thermoreflectance imaging technique that can simultaneously obtain thermal and EL images with a mega-pixel silicon-based CCD. Linear and non-linear shunt defects are investigated as well as electroluminescent breakdown regions at reverse biases as low as -5V. Pre-breakdown sites with electroluminescence are observed. The wavelength flexibility of thermoreflectance imaging is explored and thermal images of sub-micrometer defects are obtained through glass that would typically be opaque for infrared light. Image sequences show a 10μs thermal transient response of a 15μm defect in a polysilicon solar cell. Nanosecond reverse bias voltage pulses are used to detect breakdown regions in thin-film a-Si solar cells with EL.
Keywords
crystal defects; electroluminescence; flaw detection; image resolution; image sequences; infrared imaging; optical images; semiconductor device breakdown; semiconductor thin films; solar cells; thermoreflectance; EL image; electroluminescence imaging; electroluminescent breakdown; image sequence; linear shunt defect; megapixel silicon-based CCD; nonlinear shunt defect; photovoltaic device; polysilicon solar cell; reverse bias voltage pulse; submicrometer defect; submicron spatial resolution; thermal image; thermal transient response; thermoreflectance imaging; thin-film a-Si solar cell; wavelength flexibility; Thermoreflectance; defects; lock-in; shunts; solar cell; thermal imaging; thin-film;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616126
Filename
5616126
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