DocumentCode
2768196
Title
A current mirror method for thermal instability of SOI BJT
Author
Kim, Jonggook ; Liu, Yun ; De Santis, Joseph A.
Author_Institution
Adv. Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
2003
fDate
20-23 Oct. 2003
Firstpage
45
Lastpage
48
Abstract
A current mirror method is propose in this paper to evaluate thermal issues in silicon-on -insulator (SOI) bipolar junction transistors (BJTs) accompanied by conventional transistor level methods. It can provide quantitative analysis for thermal instability in the whole range of power, even in the safe operating area (SOA) derived from conventional transistor methods. The change of SOA is also investigated by current mirror with an emitter degeneration resistor and various thermal resistances using a VBIC model.
Keywords
bipolar transistors; current mirrors; silicon-on-insulator; transistor circuits; SOI BJT; VBIC model; conventional transistor level methods; current mirror method; emitter degeneration resistor; safe operating area; thermal instability; Current density; Feedback; Mirrors; Power transistors; Resistors; Semiconductor optical amplifiers; Silicon on insulator technology; Temperature; Thermal resistance; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN
0-7803-8157-2
Type
conf
DOI
10.1109/IRWS.2003.1283298
Filename
1283298
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