Effect of new processes of inter-layer-dielectric on plasma charging damage in 0.13μ dual gate oxide

Author

Lu, Wen Hui ; Ko, Lian Hoon ; Andrew, Kin Leong Yap ; Lo, Keng Foo

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

fYear

2003

fDate

20-23 Oct. 2003

Firstpage

105

Lastpage

108

Abstract

New processes of Inter-Layer-Dielectric (ILD) in 0.13μm dual gate oxide have been developed. Etch stop liner (ESL) changes from single stack SiN to dual stack ESL (SiON/SiN) and helium cooling is added during ILD high density plasma (HDP) film deposition. The plasma charging damage is investigated on new and old ILD process. Gate leakage of related antenna structures is measured. It is found from our study that new process changes can reduce thin 1.2V and thick 2.5V/3.3V gate leakage of antenna structures. So plasma charging damage is reduced by new ILD.

Keywords

dielectric thin films; integrated circuit interconnections; plasma deposition; silicon compounds; 0.13 micron; 1.2 V; 2.5 V; 3.3 V; ILD high density plasma film deposition; O; Si; antenna structures; dual gate oxide; dual stack ESL; etch stop liner; gate leakage; helium cooling; interlayer dielectric; plasma charging damage; single stack silicon nitride; Antenna measurements; CMOS technology; Copper; Etching; Gate leakage; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2003 IEEE International

Print_ISBN

0-7803-8157-2

Type

conf

DOI

10.1109/IRWS.2003.1283311

Filename

1283311