Vertical integration of ZnO nanowires into asymmetric Pt/ZnO/Ti schottky UV photodiodes

Author

Yang, C.-Y.P. ; Lin, Liwei

Author_Institution

Univ. of California, Berkeley, CA, USA

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

1382

Lastpage

1385

Abstract

The direct vertical integration of zinc-oxide (ZnO) nanowires to form rectifying UV photodiodes featuring asymmetric Schottky bottom platinum-ZnO junctions and ohmic top ZnO-titanium contacts has been demonstrated. Current-voltage electrical measurements of a prototype ZnO nanowire photodetector exhibit the characteristic rectifying behavior under dark conditions. Upon illumination with a 325 nm-wavelength HeCd UV laser, a magnitude-increase in the photocurrent was measured in the device. This versatile, highly-scalable nanowire device architecture could serve as the platform for future nano-electro-mechanical system (NEMS) applications, including nano-image sensors and high-density memory devices.

Keywords

Schottky diodes; image sensors; nanosensors; nanowires; ohmic contacts; photoconductivity; photodetectors; photodiodes; photoemission; rectification; ultraviolet radiation effects; zinc compounds; NEMS applications; PtZnOTi; UV laser; ZnO; asymmetric Schottky UV photodiodes; asymmetric Schottky bottom platinum; characteristic rectifying behavior; current-voltage electrical measurements; high-density memory devices; nano-electro-mechanical system applications; nano-image sensors; nanowire device architecture; ohmic top contacts; photocurrent; prototype nanowire photodetector; rectifying UV photodiodes; vertical integration; zinc-oxide nanowires; Electrodes; Nanowires; Photoconductivity; Photodiodes; Platinum; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2011.5734692

Filename

5734692