DocumentCode
2772182
Title
Modeling effects of velocity overshoot in extremely scaled MOSFETs
Author
Tong, J. ; Zou, X. ; Xu, J.P. ; Shen, X.B.
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
209
Lastpage
212
Abstract
A physical model of velocity-overshoot of hot-carriers based on the balanced equation of energy is developed and implemented in MOSFET models. Derived from the Boltzmann equation, a simple analytic simulation model can be put into the BSIM3 simulation model. There are better identical verifications among the model of velocity overshoot, standard BSIM3 model (not including effects of velocity overshoot) and real device data.
Keywords
Boltzmann equation; MOSFET; hot carriers; semiconductor device models; Boltzmann equation; MOSFET; analytic simulation model; balanced equation; hot-carriers; velocity overshoot; Analytical models; Boltzmann equation; Circuit simulation; Electrons; Hot carriers; MOS devices; MOSFETs; Physics; Scattering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283516
Filename
1283516
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