Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Author

Yang, L. ; Asenov, A. ; Boriçi, M. ; Watling, J.R. ; Barker, J.R. ; Roy, S. ; Elgaid, K. ; Thayne, I. ; Hackbarth, T.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

331

Lastpage

334

Abstract

Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping strategies on device performance and linearity. The device geometry is sensitive to both RF performance and device linearity. Doped channel devices are found to be promising for high linearity applications. Trade-off design strategies are required for reconciling the demands of high device performance and high linearity simultaneously. The simulations also suggest that gate length scaling helps to achieve higher RF performance, but decreases the linearity.

Keywords

Ge-Si alloys; elemental semiconductors; high electron mobility transistors; numerical analysis; semiconductor device models; silicon; 70 nm; Daimler Chrysler MODFET fabrication; RF applications; Si-SiGe; Si/SiGe MODFET; device linearity; doped channel devices; numerical simulations; Calibration; Epitaxial layers; FETs; Geometry; Germanium silicon alloys; HEMTs; Linearity; MODFETs; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283543

Filename

1283543