DocumentCode
2774885
Title
Hydrogen effect on 670 nm AlGaInP visible laser during high temperature operation
Author
Choi, Won-Jin ; Chang, Ji-Ho ; Choi, Won-Tack ; Kim, Seung-Hee ; Kim, Jong-Seok ; Leem, Shi-Jong ; Yoo, Tae-Kyung
Author_Institution
Goldstar Central Res. Lab., Seoul, South Korea
fYear
1994
fDate
19-23 Sep 1994
Firstpage
97
Lastpage
98
Abstract
It has been shown that characteristics of AlGaInP lasers are improved after a short-term aging test. It is proposed based on SIMS measurement that this phenomenon is due to the redistribution of atomic hydrogens during the operation
Keywords
III-V semiconductors; ageing; aluminium compounds; gallium compounds; high-temperature effects; indium compounds; optical testing; quantum well lasers; secondary ion mass spectroscopy; semiconductor device testing; 670 nm; AlGaInP; AlGaInP visible laser diodes; MQW lasers; SIMS measurement; atomic hydrogen redistribution; high temperature operation; hydrogen effect; multiquantum well lasers; short-term aging test; Aging; Gallium arsenide; Hydrogen; Sputtering; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519152
Filename
519152
Link To Document