• DocumentCode
    2778619
  • Title

    Mode selection in GaAs micropillar polariton lasers

  • Author

    Maragkou, M. ; Grundy, A.J.D. ; Wertz, E. ; Bloch, J. ; Lagoudakis, P.G.

  • Author_Institution
    Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
  • fYear
    2009
  • fDate
    14-19 June 2009
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Semiconductor micropillars offer an interesting way of studying polaritons in zero-dimensional cavities. In such cavities, photons are confined vertically, by the Bragg mirrors, and laterally by the index of refraction contrast between the air and the semiconductor. Zero dimensional polariton modes are the result of this three-dimensional confinement. The first observation of polariton lasing in a GaAs micropillar showed single mode operation, with lasing from the lowest energy mode in the system. We demonstrate that by careful engineering of the system, competing relaxation mechanisms can be used to achieve lasing from higher energy modes.
  • Keywords
    III-V semiconductors; gallium arsenide; laser cavity resonators; laser mirrors; laser modes; polaritons; refractive index; semiconductor lasers; Bragg mirrors; GaAs; high energy modes; index of refraction; polariton lasing mechanism; relaxation mechanism; semiconductor micropillars; single mode operation; three-dimensional confinement; vertically confined photons; zero dimensional polariton mode cavities; Charge carrier density; Excitons; Gallium arsenide; Laser modes; Laser theory; Microcavities; Optical scattering; Particle scattering; Reservoirs; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-4079-5
  • Electronic_ISBN
    978-1-4244-4080-1
  • Type

    conf

  • DOI
    10.1109/CLEOE-EQEC.2009.5191709
  • Filename
    5191709