DocumentCode
2778619
Title
Mode selection in GaAs micropillar polariton lasers
Author
Maragkou, M. ; Grundy, A.J.D. ; Wertz, E. ; Bloch, J. ; Lagoudakis, P.G.
Author_Institution
Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
Semiconductor micropillars offer an interesting way of studying polaritons in zero-dimensional cavities. In such cavities, photons are confined vertically, by the Bragg mirrors, and laterally by the index of refraction contrast between the air and the semiconductor. Zero dimensional polariton modes are the result of this three-dimensional confinement. The first observation of polariton lasing in a GaAs micropillar showed single mode operation, with lasing from the lowest energy mode in the system. We demonstrate that by careful engineering of the system, competing relaxation mechanisms can be used to achieve lasing from higher energy modes.
Keywords
III-V semiconductors; gallium arsenide; laser cavity resonators; laser mirrors; laser modes; polaritons; refractive index; semiconductor lasers; Bragg mirrors; GaAs; high energy modes; index of refraction; polariton lasing mechanism; relaxation mechanism; semiconductor micropillars; single mode operation; three-dimensional confinement; vertically confined photons; zero dimensional polariton mode cavities; Charge carrier density; Excitons; Gallium arsenide; Laser modes; Laser theory; Microcavities; Optical scattering; Particle scattering; Reservoirs; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5191709
Filename
5191709
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