• DocumentCode
    2778925
  • Title

    Effect of deposition temperature of SiNx/a-Si/n+ a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability

  • Author

    Lin, Hui Chu ; Chen, Yeong-E

  • Author_Institution
    Electron. Res. & Service Org., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    105
  • Lastpage
    109
  • Abstract
    Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280°C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiNx/ a-Si/n+a-Si films by monochamber PECVD processing at 280°C, a-Si:H TFTs have higher mobility and better capability against voltage stressing
  • Keywords
    amorphous semiconductors; carrier mobility; elemental semiconductors; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; thin film transistors; 280 C; SiN-Si-Si; SiNx/a-Si/n+a-Si film; a-Si TFT; carrier mobility; deposition temperature; electrical characteristics; monochamber PECVD processing; stability; voltage stress; Chromium; Electric variables; Electrodes; Hydrogen; Plasma temperature; Silicon compounds; Sputter etching; Stability; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    957-97347-9-8
  • Type

    conf

  • DOI
    10.1109/ASID.1999.762724
  • Filename
    762724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2778925