Microscopic modeling of high frequency noise in SiGe HBTs

Author

Ramonas, Mindaugas ; Sakalas, Paulius ; Jungemann, Christoph ; Schroter, Michael ; Kraus, Wolfgang ; Shimukovitch, Artur

Author_Institution

Bundeswehr Univ., Neubiberg

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

183

Lastpage

186

Abstract

The SIMS doping profile of SiGe heterojunction bipolar transistor is calibrated for best agreement of the hydrodynamic model results with the experiment. DC and small-signal data is used for the calibration. The terminal current noise calculations are performed using both hydrodynamic and drift-diffusion models with the calibrated doping profile. The calculation results are compared with the experimental values. Overall good agreement for the minimum noise figure, the noise resistance, and the optimum reflection coefficient is obtained. The difference between the hydrodynamic and drift-diffusion model results is analyzed using spectral intensities of the base and collector current fluctuations.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; DC signal data; SIMS doping profile; SiGe; calibration; drift-diffusion models; heterojunction bipolar transistor; high frequency noise; hydrodynamic models; microscopic modeling; noise resistance; small-signal data; Calibration; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrodynamics; Microscopy; Noise figure; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430909

Filename

4430909