DocumentCode
2781092
Title
Characterization of PVD aluminum nitride for heat spreading in RF IC's
Author
Spina, L. La ; Nanver, L.K. ; Schellevis, H. ; Iborra, E. ; Clement, M. ; Olivares, J.
Author_Institution
Delft Univ. of Technol., Delft
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
354
Lastpage
357
Abstract
Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 mum, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.
Keywords
aluminium compounds; heat sinks; integrated circuits; thermal management (packaging); vapour deposition; RF integrated circuit; dielectric insulator; electrothermal instability; mechanical stress; physical-vapor-deposited aluminum nitride; piezoelectric response; silicon-on-glass bipolar process; Aluminum nitride; Atherosclerosis; Dielectric materials; Dielectric measurements; Dielectrics and electrical insulation; Electrothermal effects; Piezoelectric materials; Radio frequency; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430951
Filename
4430951
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