• DocumentCode
    2781151
  • Title

    Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation

  • Author

    Rao, Padmakumar R. ; Wang, Xinyang ; Theuwissen, Albert J P

  • Author_Institution
    Delft Univ. of Technol., Delft
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    370
  • Lastpage
    373
  • Abstract
    In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor´s sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2 interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.
  • Keywords
    CMOS image sensors; gamma-ray effects; CMOS image sensor; Si-SiO2 interface; deep-submicron technology; gamma-ray irradiation; shallow trench isolation; spectral response; CMOS image sensors; CMOS technology; Dark current; Degradation; Electrons; Equations; Instruments; Ionization; Leakage current; Photodiodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430955
  • Filename
    4430955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2781151