Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory

Author

Jacob, S. ; Festes, G. ; Bodnar, S. ; Coppard, R. ; Thiery, J.F. ; Pate-Cazal, T. ; Pedron, T. ; De Salvo, B. ; Perniola, L. ; Jalaguier, E. ; Boulanger, F. ; Deleonibus, S.

Author_Institution

Technol. Dev. ATMEL Rousset, Rousset

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

410

Lastpage

413

Abstract

In this paper, silicon nanocrystals (Si-NCs) fabricated by chemical vapor deposition (CVD) are, for the first time at our knowledge, successfully integrated in a 32 Mb NOR flash memory product, processed in a 130 nm technology platform. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme. Different Si-NC deposition conditions are explored and the array voltage distribution widths are related to Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are correlated to single cell characteristics.

Keywords

CVD coatings; NOR circuits; flash memories; integrated circuit reliability; nanostructured materials; silicon; CVD silicon nanocrystals; NOR flash memory; Si; array voltage distribution widths; chemical vapor deposition; data-retention; reliability characteristics; single cell characteristics; size 130 nm; Chemical technology; Chemical vapor deposition; Dielectrics; Flash memory; Logic arrays; Nanocrystals; Nonvolatile memory; Robustness; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430965

Filename

4430965