Characterization of ZnO-based FBAR devices for RF applications

Author

Yoon, Giwan ; Park, Jae-Don ; Park, Hee-Dae

Author_Institution

Inf. & Commun. Univ., Hwaam-dong, China

fYear

2000

fDate

2000

Firstpage

192

Lastpage

195

Abstract

This paper reports a two-step sputtering deposition technique for piezoelectric ZnO film formation and its successful application for film bulk acoustic resonator (FBAR) devices. The proposed two-step deposition resulted in a strongly preferred orientation toward the c-axis. Furthermore, the FBAR devices with the ZnO films showed a large return loss of 35~50 dB at 1.5~2 GHz. It was also found that the impedance matching of the FBAR could be easily achieved simply by controlling the resonance area of the resonator

Keywords

UHF devices; acoustic microwave devices; bulk acoustic wave devices; impedance matching; piezoelectric thin films; sputter deposition; zinc compounds; 1.5 to 2 GHz; 35 to 50 dB; FBAR devices; RF applications; ZnO; c-axis strongly preferred orientation; film bulk acoustic resonators; impedance matching; piezoelectric film formation; resonance area; return loss; two-step sputtering deposition technique; Film bulk acoustic resonators; Piezoelectric devices; Piezoelectric films; Radio frequency; Rough surfaces; Semiconductor films; Sputtering; Surface morphology; Surface roughness; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895654

Filename

895654