DocumentCode
2782125
Title
High-Q poly-to-poly capacitor design for RF applications
Author
Lee, Jin-Taek ; Choi, Jeong-Ki ; Lee, Sang-Gug
Author_Institution
Inf. and Commun. Univ, Daejon, South Korea
fYear
2000
fDate
2000
Firstpage
196
Lastpage
199
Abstract
A very high-Q poly-to-poly capacitor structure and the measurement results are presented. The poly-to-poly capacitor is designed on a conventional 0.35 μm CMOS process. Through the layout optimization, a Q-factor greater than 120 is obtained at 2 GHz
Keywords
CMOS integrated circuits; Q-factor; UHF integrated circuits; capacitors; equivalent circuits; 0.35 micron; 2 GHz; CMOS process; Q-factor; RF applications; high-Q capacitor design; layout optimization; poly-to-poly capacitor design; Abstracts; Availability; CMOS process; CMOS technology; Capacitors; Equivalent circuits; Parasitic capacitance; Q factor; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location
Beijing
Print_ISBN
0-7803-5743-4
Type
conf
DOI
10.1109/ICMMT.2000.895655
Filename
895655
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