Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling

Author

Hazeghi, Arash ; Krishnamohan, Tejas ; Wong, H. -S Philip

Author_Institution

Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305. Email: ahazeghi@stanford.edu

Volume

1

fYear

2006

fDate

17-20 June 2006

Firstpage

238

Lastpage

241

Abstract

The theoretical performance of Carbon Nanotube Field Effect Transistors (CNFETs) with Schottky barriers is examined by means of a ballistic model. A novel approach is used to treat the Schottky barriers at the metal-nanotube contacts as mesoscopic scatterers. Evanescent-mode analysis is used to derive a length-scale and potential profile for the device. Noticeable current reduction is observed compared to previous ballistic models without Schottky barriers. The effects of device geometry, nanotube diameter and chirality as well as Schottky barrier height on the drain current are studied. Quantum conductance degradation due to Schottky barriers is also observed.

Keywords

CNFET; Schottky barrier; ballistic channel; carbon nanotube transistor; evanescent-mode analysis; CNTFETs; Carbon nanotubes; Contacts; Degradation; Geometry; Nanoscale devices; Particle scattering; Physics; Poisson equations; Schottky barriers; CNFET; Schottky barrier; ballistic channel; carbon nanotube transistor; evanescent-mode analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on

Print_ISBN

1-4244-0077-5

Type

conf

DOI

10.1109/NANO.2006.247618

Filename

1717068