DocumentCode
2783991
Title
Oxygen elimination effect in silicon thin film by neutral beam assisted CVD system at room temperature
Author
Jang, Jin Nyong ; Song, Byoung Chul ; Lee, Dong Hyeok ; Kim, Daechul ; Yoo, Suk Jae ; Lee, Bonju ; Hong, MunPyo
Author_Institution
Dept. of Display & Semicond. Phys., Korea Univ., Jochiwon, South Korea
fYear
2010
fDate
20-25 June 2010
Abstract
Solar cells with multi-junction structures employing various band gap layers are nowadays issue to achieve higher efficiency. We have prepared neutral beam assisted CVD (NBaCVD) deposited a-Si:H which has different oxygen contents as reflector bias and termination capacitor. The oxygen supplied by sputtering of quartz tube(shied for internal ICP antenna) as control of self bias. To control self sputtering of quartz we attached optimized valued capacitor between ends of antenna and ground. As increase of reflector bias directly related the energy of hydrogen, which is reflected from reflector, is increase then the oxygen contents reduced and transform the film structure as amorphous to nano-crystalline. The FTIR, XPS, optical band gap show the changes of oxygen and a-Si:H state as effect of energetic hydrogen reaction with oxygen and Six-Hy bond.
Keywords
Fourier transform spectra; X-ray photoelectron spectra; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; infrared spectra; nanofabrication; nanostructured materials; optical constants; oxygen; semiconductor growth; semiconductor thin films; silicon; solar cells; sputter deposition; FTIR; Si:H; XPS; band gap layers; energetic hydrogen reaction; film structure transform; multijunction structures; neutral beam assisted CVD system; optical band gap; oxygen elimination effect; quartz tube self sputtering; reflector bias; silicon thin film; temperature 293 K to 298 K; termination capacitor; Capacitors; Optical films; Optical reflection; Photonic band gap; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5617028
Filename
5617028
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