• DocumentCode
    2783991
  • Title

    Oxygen elimination effect in silicon thin film by neutral beam assisted CVD system at room temperature

  • Author

    Jang, Jin Nyong ; Song, Byoung Chul ; Lee, Dong Hyeok ; Kim, Daechul ; Yoo, Suk Jae ; Lee, Bonju ; Hong, MunPyo

  • Author_Institution
    Dept. of Display & Semicond. Phys., Korea Univ., Jochiwon, South Korea
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Solar cells with multi-junction structures employing various band gap layers are nowadays issue to achieve higher efficiency. We have prepared neutral beam assisted CVD (NBaCVD) deposited a-Si:H which has different oxygen contents as reflector bias and termination capacitor. The oxygen supplied by sputtering of quartz tube(shied for internal ICP antenna) as control of self bias. To control self sputtering of quartz we attached optimized valued capacitor between ends of antenna and ground. As increase of reflector bias directly related the energy of hydrogen, which is reflected from reflector, is increase then the oxygen contents reduced and transform the film structure as amorphous to nano-crystalline. The FTIR, XPS, optical band gap show the changes of oxygen and a-Si:H state as effect of energetic hydrogen reaction with oxygen and Six-Hy bond.
  • Keywords
    Fourier transform spectra; X-ray photoelectron spectra; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; infrared spectra; nanofabrication; nanostructured materials; optical constants; oxygen; semiconductor growth; semiconductor thin films; silicon; solar cells; sputter deposition; FTIR; Si:H; XPS; band gap layers; energetic hydrogen reaction; film structure transform; multijunction structures; neutral beam assisted CVD system; optical band gap; oxygen elimination effect; quartz tube self sputtering; reflector bias; silicon thin film; temperature 293 K to 298 K; termination capacitor; Capacitors; Optical films; Optical reflection; Photonic band gap; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5617028
  • Filename
    5617028