DocumentCode
2784944
Title
Temperature dependence of ultrafast laser ablation efficiency of crystalline silicon
Author
Yahng, J.S. ; Jeoung, S.C.
Author_Institution
Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.
Keywords
Crystallization; Laser ablation; Optical surface waves; Pulsed laser deposition; Rough surfaces; Silicon; Surface emitting lasers; Surface morphology; Temperature dependence; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431172
Filename
4431172
Link To Document