DocumentCode
2785100
Title
History Dependent Recovery of NBTI under Alternating DC and AC Stress
Author
Kufluoglu, Haldun ; Prasad, Chetan ; Agostinelli, Marty
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
fYear
2007
fDate
15-19 April 2007
Firstpage
690
Lastpage
691
Abstract
Fast NBTI recovery experiments performed for alternating DC and AC stress modes show that recovery behavior is strongly influenced by degradation history. Proper modeling of PMOS recovery in circuits as well as projections of product lifetime must comprehend the interaction of DC and AC usage states.
Keywords
MOSFET; semiconductor device models; semiconductor device reliability; NBTI; PMOS recovery; alternating DC-AC stress; history dependent recovery; product lifetime; recovery behavior; Annealing; Degradation; Dispersion; History; Hydrogen; Kinetic theory; MOSFET circuits; Niobium compounds; Stress; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369572
Filename
4227756
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