• DocumentCode
    2785617
  • Title

    Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

  • Author

    Zhao, Zhiya ; Lantz, Kevin R. ; Yi, Changhyun ; Stiff-Roberts, Adrienne D.

  • Author_Institution
    Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708 USA
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.
  • Keywords
    Capacitance-voltage characteristics; Doping; Energy states; Gallium arsenide; Impurities; Infrared detectors; Infrared spectra; Photodetectors; Quantum dots; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431210
  • Filename
    4431210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785617