• DocumentCode
    2786054
  • Title

    Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers

  • Author

    Morosini, M.B.Z. ; Herrera-Perez, J.L. ; da Silveira, A.C.F. ; Von Zuben, A.A.G. ; Loural, M.S.S. ; Patel, N.B.

  • Author_Institution
    Instituto de Fisica "GLEB WATAGHIN"-UNICAMP
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    We show that the development of 2.Z/spl mu/m emission low threshold Ridge Waveguide lasers from GaInAsSb/GaAIAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.
  • Keywords
    Chemical lasers; Chemical processes; Conductivity; DH-HEMTs; Doped fiber amplifiers; Etching; Optical device fabrication; Optical pulses; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763571
  • Filename
    763571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786054