DocumentCode
2786062
Title
Selective-area Growth of the Hexagonal Nano-pillars with Single InGaAs/GaAs Quantum Well and Their Temperature-dependence Photoluminescence
Author
Yang, L. ; Motohisa, J. ; Takeda, J. ; Tomioka, Katsuhiro ; Fukui, T. ; Yang, Lei ; Motohisa, J. ; Takeda, Jun ; Tomioka, Katsuhiro ; Fukui, T.
Author_Institution
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan. E-mail: lyang@rciqe.hokudai.ac.jp and lyang@red.semi.ac.cn
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
706
Lastpage
709
Abstract
Hexagonal nano-pillars with single InGaAs/GaAs quantum well (QW) were fabricated successfully on the GaAs
Keywords
Epitaxial growth; Fabrication; Gallium arsenide; Indium gallium arsenide; Lattices; Lithography; Photoluminescence; Substrates; Temperature; Wet etching; InGaAs/GaAs quantum well; hexagonal nano-pillars; selective-area MOVPE; temperature-dependence photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247752
Filename
1717202
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