DocumentCode
2786616
Title
Carrier confinement and its effect on the internal quantum efficiency and modulation response of quantum well lasers
Author
Nagarajan, R. ; Mirin, R.P. ; Reynolds, T.E. ; Bowers, J.E.
Author_Institution
Univ. of California
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
140
Lastpage
141
Abstract
Recently it was shown that carrier transport can have a significant effect on the modulation response and relative intensity noise of quantum well lasers. We showed that carrier transport across wide undoped separate confinement heterostructure (SCH) regions leads to a severe low frequency rolloff in the modulation response, in addition to a reduction in the effective differential gain. Analytic expressions for the modulation response, resonance frequency and damping were also derived which showed that the differential gain, go, is reduced to go//spl chi/. The transport factor, /spl chi/, is given by (1+/spl tau//sub r///spl tau//sub e/ where /spl tau//sub r/, is the carrier transport time across the SCH and /spl tau//sub e/, is the themioaic emission time out of the quantum well. The rolloff frequency is given by /spl tilde/ 1/2/spl pi/spl tau//sub r/.
Keywords
Bandwidth; Carrier confinement; Energy barrier; Gallium arsenide; Intensity modulation; Laser noise; Quantum computing; Quantum well devices; Quantum well lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763610
Filename
763610
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