DocumentCode
2786719
Title
Silicon nanowire-schottky solar cell by liquid processes
Author
Kim, Joondong ; Yun, Ju-Hyung ; Park, Yun Chang ; Han, Chang-Soo ; Cho, Yong Jae ; Park, Jeunghee
Author_Institution
Nano-Mech. Syst. Res. Div., Korea Inst. of Machinery & Mater. (KIMM), Daejeon, South Korea
fYear
2010
fDate
20-25 June 2010
Abstract
Single crystalline silicon nanowires (SiNWs) were utilized to achieve a Schottky type solar cell by alternating two different metals, which induces an ohmic contact or a Schottky contact according to the difference in work function to a Si nanowire. Under 1 sun illumination, the SiNW Schottky solar cell provided 0.167V of photovoltage and 91 nA of photocurrent.
Keywords
Schottky barriers; elemental semiconductors; nanowires; ohmic contacts; solar cells; Si; current 91 nA; liquid process; ohmic contact; photocurrent; photovoltage; silicon nanowire Schottky solar cell; single crystalline silicon nanowire; voltage 0.167 V; Electrodes; Lighting; Photovoltaic cells; Schottky barriers; Silicon; Substrates; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5617193
Filename
5617193
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