DocumentCode
2786736
Title
High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier
Author
Rennie, J. ; Okajima, M. ; Watanabe, M. ; Hatakoshi, G.
Author_Institution
Toshiba Corporation
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
158
Lastpage
159
Abstract
A 634nm InGaAlP laser, incorporating a multiple quantum barrier (MQB), has been developed exhibiting a high, 74"C, maximum operating temperature and a law threshold current 49mA. The presence of the MQB inducing these superior characteristics.
Keywords
Diode lasers; Electrons; Gas lasers; Optical recording; Quantum well devices; Quantum well lasers; Research and development; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763618
Filename
763618
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