• DocumentCode
    2787188
  • Title

    Carrier leakage in 1.3/spl mu/m SCH quantum well lasers

  • Author

    Hausser, S. ; Harder, C. ; Meier, H.P.

  • Author_Institution
    IBM Research Division
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    230
  • Lastpage
    231
  • Abstract
    We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.
  • Keywords
    Carrier confinement; Current density; Indium phosphide; Laboratories; Photonic band gap; Quantum well lasers; Spontaneous emission; Temperature dependence; Thermoelectric devices; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763649
  • Filename
    763649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787188