• DocumentCode
    2787329
  • Title

    Emission Intensity Improvement of InGaN Ultraviolet Light-Emitting Diodes Grown on Wet-Etched Sapphire Substrates

  • Author

    Pan, Chang-Chi ; Hsieh, Chi-Hsun ; Chyi, Jen-Inn

  • Author_Institution
    Optical Sciences Center and Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, China
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Keywords
    Dry etching; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical pumping; Optical sensors; Power generation; Stimulated emission; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431326
  • Filename
    4431326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787329