• DocumentCode
    2792168
  • Title

    Electrical properties of ZrO2 thin film prepared by sol-gel method

  • Author

    Yoshimura, Noboru ; Itoi, Masashi ; Sato, Shigeki ; Taguchi, Haruo

  • Author_Institution
    Dept. of Electr. Eng., Min. Coll., Akita Univ., Japan
  • fYear
    1991
  • fDate
    8-12 Jul 1991
  • Firstpage
    177
  • Abstract
    ZrO2 thin films were prepared by the sol-gel method using metal alkoxide (Zr(O-n-Bu)4). These films were monoclinic crystalline phase ZrO2, which cannot be prepared by general methods. The electrical properties of ZrO2 thin film show good electrical insulation. The ZrO2 thin film is expected to serve as capacitor and coating for insulating film
  • Keywords
    ceramics; dielectric thin films; electric strength; insulating thin films; sol-gel processing; zirconium compounds; ZrO2 thin films; capacitor dielectric film; electrical insulation; electrical properties; insulating coating film; insulating film; metal alkoxide; monoclinic crystalline phase; preparation; sol-gel method; zirconium n-butoxide; Atherosclerosis; Ceramics; Chemical vapor deposition; Costs; Crystallization; Insulation; Scanning electron microscopy; Semiconductor thin films; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    0-87942-568-7
  • Type

    conf

  • DOI
    10.1109/ICPADM.1991.172036
  • Filename
    172036
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2792168