Static and dynamic thermal characteristics of IGBT power modules

Author

Yun, Chan-Su ; Regli, P. ; Waldmeyer, Jürg ; Fichtner, Wolfgang

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1999

fDate

1999

Firstpage

37

Lastpage

40

Abstract

This paper discusses the thermal behavior of an IGBT power module under static and dynamic conditions. Thermal interference and solder size effects were investigated. In the dynamic response, the thermal impedance was characterized by two transition times. For a pulse width modulation (PWM) scheme, conduction and switching losses are considered and a RC component model is proposed to predict the thermal characteristics in steady state periodic condition

Keywords

dynamic response; insulated gate bipolar transistors; losses; modules; power bipolar transistors; power semiconductor switches; pulse width modulation; semiconductor device models; semiconductor device packaging; size effect; soldering; thermal analysis; thermal resistance; IGBT power module; IGBT power modules; RC component model; conduction; dynamic conditions; dynamic response; dynamic thermal characteristics; pulse width modulation; solder size effects; static conditions; static thermal characteristics; steady state periodic condition; switching losses; thermal behavior; thermal characteristics; thermal impedance; thermal interference; transition times; Impedance; Insulated gate bipolar transistors; Interference; Multichip modules; Predictive models; Pulse width modulation; Space vector pulse width modulation; Steady-state; Switching loss; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764037

Filename

764037