• DocumentCode
    2793104
  • Title

    A new concept for the lateral DMOS transistor for smart power IC´s

  • Author

    Zitouni, M. ; Morancho, F. ; Rossel, P. ; Tranduc, H. ; Buxo, J. ; Pagès, I.

  • Author_Institution
    LAAS-CNRS, Toulouse, France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    73
  • Lastpage
    76
  • Abstract
    In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region
  • Keywords
    MOS integrated circuits; integrated circuit testing; isolation technology; power MOSFET; power integrated circuits; drift region gate end; lateral DMOS transistor; lateral DMOSFET; smart power IC; smart power integrated circuits; vertical trench; Automotive engineering; CMOS technology; Cost function; Diodes; Doping; Driver circuits; Electrical equipment industry; Power integrated circuits; Surface resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764055
  • Filename
    764055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2793104