Comparison of RF performance of vertical and lateral DMOSFET

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

1999

fDate

1999

Firstpage

245

Lastpage

248

Abstract

Despite the increasing popularity of Si MOSFETs in RF applications, detailed physical understanding has yet to be developed with regard to the relative RF performance of VDMOSFETs and LDMOSFETs. In this paper, a critical comparison is made between the performance of VDMOSFETs and LDMOSFETs developed for RF power applications. Device performance is investigated using experimental characterization and numerical simulation. It is shown that LDMOSFETs have better RF performance than VDMOS due to structural differences between the two devices

Keywords

UHF field effect transistors; numerical analysis; power MOSFET; semiconductor device models; semiconductor device testing; LDMOSFETs; RF applications; RF performance; RF power applications; Si MOSFETs; VDMOSFETs; device performance; lateral DMOSFET; numerical simulation; structural differences; vertical DMOSFET; Capacitance measurement; Circuit simulation; Design optimization; Geometry; Packaging; Radio frequency; Scattering parameters; Solid modeling; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764109

Filename

764109