DocumentCode
2793939
Title
Table of contents
fYear
2006
fDate
5-8 Nov. 2006
Firstpage
1
Lastpage
2
Abstract
The following topics are dealt with: future directions for non-volatile memory technology; phase-change random access memory; binary oxide resistive memories; flash memories such as twin-flash memory, NAND-type SONOS flash memory, floating gate NOR flash memory, and EEPROM; CMOS circuit design for non-volatile resistive memory; CMOS circuits for the next generation of non-volatile memory technology; relaxor ferroelectrics, ferroelectric capacitor memory, and MRAM; and nanoelectronic memories.
Keywords
CMOS memory circuits; NAND circuits; NOR circuits; ferroelectric storage; flash memories; integrated circuit design; logic design; magnetic storage; nanoelectronics; phase change materials; random-access storage; relaxor ferroelectrics; CMOS circuit design; EEPROM; MRAM; NAND-type SONOS flash memory; binary oxide resistive memory; ferroelectric capacitor memory; floating gate NOR flash memory; nanoelectronic memory; nonvolatile memory technology; phase-change random access memory; relaxor ferroelectrics; twin flash;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual
Conference_Location
San Mateo, CA
Print_ISBN
0-7803-9738-X
Type
conf
DOI
10.1109/NVMT.2006.378865
Filename
4228424
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