Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory

Author

Honda, Koichiro ; Cho, Yasuo

Author_Institution

Memory Device Lab., Fujitsu Labs. Ltd., Atsugi

fYear

2006

fDate

5-8 Nov. 2006

Firstpage

4

Lastpage

11

Abstract

By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO₂-Si₃N₄-SiO₂ (ONO) film of the Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si₃N₄ part of the ONO film. The holes, on the other hand, were found in the Si₃N₄ film as well as in the bottom SiO₂ film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

Keywords

MIS devices; flash memories; scanning electron microscopy; silicon compounds; thin films; MONOS; SiO₂-Si₃N₄-SiO₂; floating gate; metal-oxide-nitride-oxide-semiconductor type flash; scanning nonlinear dielectric microscopy; thin gate film; Capacitance; Charge carrier processes; Dielectric constant; Dielectric devices; Dielectric thin films; Flash memory; MONOS devices; Nonvolatile memory; Scanning electron microscopy; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual

Conference_Location

San Mateo, CA

Print_ISBN

0-7803-9738-X

Type

conf

DOI

10.1109/NVMT.2006.378866

Filename

4228425