A novel dual gated lateral MOS-bipolar power device

Author

Hardikar, S. ; Narayanan, E. M Sankara ; De Souza, M.M. ; Huang, A.Q. ; Amaratunga, G.

Author_Institution

Center of Emerging Technol. Res., De Montfort Univ., Leicester, UK

fYear

1999

fDate

1999

Firstpage

261

Lastpage

264

Abstract

A novel CMOS compatible lateral dual gated MOS-bipolar transistor (DGMBT) is demonstrated through experiments. The device is configured by a parallel combination of an LDMOS and an LIGBT. The device can be made to operate in different modes by controlling the low voltage bias on the LDMOS and the LIGBT gates. In the mixed mode, unlike an anode shorted LIGBT, this device shows a smooth transition from the MOSFET mode to a bipolar mode without any snapback. By controlling the gate bias at the LIGBT end, the level of injection can be controlled. The anode short ensures that the device turns off much faster than a conventional LIGBT

Keywords

CMOS integrated circuits; power MOSFET; power bipolar transistors; power integrated circuits; semiconductor device testing; CMOS compatible lateral dual gated MOS-bipolar transistor; LIGBT gate bias; LIGBT gates; MOSFET mode; anode short; anode shorted LIGBT; bipolar mode; device turn off; dual gated lateral MOS-bipolar power device; injection level control; low voltage bias control; mixed mode; operating modes; parallel LDMOS/LIGBT device configuration; power IC applications; Anodes; Bipolar transistors; CMOS technology; Cathodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power engineering and energy; Power integrated circuits; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764113

Filename

764113