Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology

Author

Im, Jay ; Ang, Boon ; Tumakha, Sergey ; Paak, Sunhom

Author_Institution

Technol. Dev., Xilinx Inc., San Jose, CA

fYear

2006

fDate

5-8 Nov. 2006

Firstpage

55

Lastpage

57

Abstract

NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.

Keywords

CMOS logic circuits; CMOS memory circuits; electromigration; integrated circuit reliability; nickel compounds; scanning electron microscopy; NiSi; SEM; eFUSE; electrical responses; electrically programmable fuses fabrication; electromigration; fuse program optimization; logic CMOS technology; physical responses; reliable high post-program fuse resistance; silicided polysilicon fuse characterization; size 65 nm; Application specific integrated circuits; CMOS logic circuits; CMOS technology; Circuit testing; Electromigration; Fuses; Geometry; Logic devices; Silicides; Temperature; CMOS logic; NVM; NiSi; OTP; eFUSE; electromigration; poly fuse;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual

Conference_Location

San Mateo, CA

Print_ISBN

0-7803-9738-X

Type

conf

DOI

10.1109/NVMT.2006.378877

Filename

4228436